symbol value unit continuous reverse voltage v r 240 volts peak repetitive reverse voltage v rrm 300 volts peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i rfm 625 ma non-repetitive peak forward current at tp = 1 m si fsm 4.0 a at tp = 1 s i fsm 1.0 a power dissipation p tot 350 mw maximum junction temperature t j 150 ?c storage temperature range t s e65 to +150 ?c typical thermal resistance junction to ambient air r q ja 357 c/w new product new product new product GSD2004S small signal diodes features silicon epitaxial planar diode fast switching dual in-series diode, especially suited for applications requiring high voltage capability mechanical data case: sot-23 (to-236ab) plastic package weight: approx. 0.008 g marking code: db6 maximum ratings and thermal characteristics ratings at 25?c ambient temperature unless otherwise specified (per diode) 1/15/99 dimensions in inches and (millimeters) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) sot-23
GSD2004S electrical characteristics symbol min. typ. max. unit reverse breakdown voltage at i r =100 m av br 300 - - volts leakage current at v r = 240 v i r - - 100 na at v r = 240 v, t j = 150?c i r - - 100 m a forward voltage at i f = 20 ma v f - 0.83 0.87 volts at i f = 100 ma v f - - 1.00 volts capactiance c tot - - 5.0 pf at v f = v r = 0; f = 1mh z reverse recovery time i f = i a = 30 ma, i rr = 3.0 ma t rr - - 50 ns r l = 100 w ratings at 25?c ambient temperature unless otherwise specified (per diode). 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches and (millimeters)
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